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. 2015 Dec 11;5:18172. doi: 10.1038/srep18172

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(a) A diagram of setup. (b) Side-view of the layered semiconductor-dielectric structure under an external magnetic field B (viewed from the gray cut plane shown in (a)). The center-to-center distance between two resolved slits carved on Cr mask is 100 μm. The width of the both resolved slits is 50 μm. L_x = 130 μm (L_y = 440 μm) is the x-direction (y-direction) length of layered system. d₁ = d₂ = 10 μm. θ denotes the angle between the propagation direction and the normal direction. (c) Structure equivalent to (b), which includes the effect of external magnetic field.