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. 2015 Dec 11;5:18172. doi: 10.1038/srep18172

Figure 3. Magnetically controlled εv values and isofrequency curves in a layered semiconductor-dielectric structure.

Figure 3

(a) Calculated εv values as a function of magnitude of external magnetic field B at 1 THz and 3.16 THz. (b) Calculated isofrequency curves at 1 THz with magnitudes of external magnetic field of 0 Tesla and 4.14 Tesla. (c,d) Simulated time-averaged power flow contours with magnitudes of external magnetic field equal to 0 Tesla and 4.14 Tesla, respectively.