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. 2015 Dec 11;5:18172. doi: 10.1038/srep18172

Figure 6. Simulated time-averaged power flow contours for double slits embedded in different materials at incident frequency of 1 THz.

Figure 6

(a,b) The double slits are embedded in air and in Si, respectively. (c,d) The imaging device under the double slits are Si plate and proposed layered structure with B = 4.14 Tesla, respectively. L = 80 μm.