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. 2015 Dec 14;5:17849. doi: 10.1038/srep17849

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Copyright © 2015, Macmillan Publishers Limited

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(a) Transistor device structure and chemical structures of e-PVDF and PTDPPTFT4. (b,c) Output and transfer characteristics of PTDPPTFT4 (channel length L = 50 μm, channel width W = 1000 μm), where V_DS = −5 V. The thickness of the dielectric is 1.4 μm. Two slopes in the I_DS^1/2 vs. V_G plot were observed. This may be attributed to the existence of contact resistance in the device. We used the first slope in the range of +0.2 V to −2 V to estimate mobility values.