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. 2015 Dec 14;5:17849. doi: 10.1038/srep17849

Figure 2. Device characteristics of PTDPPTFT4 transistors fabricated on e-PVDF-HFP and c-PVDF-HFP.

Figure 2

(a) Transfer curves of OTFTs prepared on e-PVDF-HFP dielectric layer with varying thicknesses. (b) Corresponding field-effect mobility as a function of the thickness of e-PVDF-HFP determined by using capacitance at 20 Hz, 0.1 Hz and quasi-DC values. The adoption of capacitance at 20 Hz gives rise to underestimation of the actual charge carrier density during transfer characteristic measurements and therefore inflated mobility values. (c) Device characteristics in forward and reverse sweep. (d) Temperature-dependent transconductance of PTDPPTFT4 FETs made on e-PVDF-HFP (solid trace) and OTS-modified SiO2 (dotted trace). (e) Transfer curves of OTFTs prepared on c-PVDF-HFP dielectric layer with varying thicknesses. (f) Corresponding field-effect mobility as a function of the thickness of c-PVDF-HFP determined by using capacitance at 20 Hz and quasi-DC values.