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. Author manuscript; available in PMC: 2016 Dec 25.
Published in final edited form as: J Alloys Compd. 2015 Dec 25;653:255–259. doi: 10.1016/j.jallcom.2015.09.021

Figure 3.

Figure 3

(a) XRD patterns of 50 nm TiO2 coated Si showing diffraction peaks arising exclusively from anatase phase of prepared TiO2 and Si substrate. The inset confirms the diffraction peaks of the Si substrate. (b) Obtained absorbance spectrum of the prepared TiO2 thin-film from UV to visible light regions. The inset shows the estimation of the indirect optical band gap of TiO2 using Tauc plot.