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. 2015 Dec 16;5:18282. doi: 10.1038/srep18282

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(a–c) Evolution of Hall resistance R_xy, carrier density and mobility as functions of LSTO thicknesses. All data are collected at 2 K with no back gate voltage (V_g) applied. The R_xy is linear for 6 uc, but becomes increasingly nonlinear as the film thickness grows. (d–f) Temperature dependence of nonlinear Hall effect, carrier density and mobility for 60 uc LSTO. Nonlinear Hall effect was only observed under 100 K. (g–i) V_g dependence of nonlinear Hall effect, carrier density and mobility for 60 uc LSTO measured at 40 K.