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. 2015 Nov 23;6:2193–2206. doi: 10.3762/bjnano.6.225

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Copyright © 2015, Wagner et al.

This is an Open Access article under the terms of the Creative Commons Attribution License (https://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

The license is subject to the Beilstein Journal of Nanotechnology terms and conditions: (https://www.beilstein-journals.org/bjnano/terms)

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a) Sideband amplitude (blue) and phase (red) relative to the carrier oscillation measured during a sweep of the modulation frequency (markers), and a fit of the harmonic oscillator (solid lines). At a constant height of approx. 25 nm above the sample, the tip was driven mechanically at f_d = ω_d/2π = 70657 Hz and electrically at f_m. Parameters to the least-squares fit are = 33 Hz, f₀ = 70586 Hz, and Q = 190. b) Amplitude and phase of the complex modulation index for a narrow-band frequency modulation, . The solid lines are a plot of the approximation in Equation 9. The dashed lines indicate the expected behaviour for f_m>> f_c, neglecting the influence of the damped harmonic oscillator.

Inline graphic — a) Sideband amplitude (blue) and phase (red) relative to the carrier oscillation measured during a sweep of the modulation frequency (markers), and a fit of the harmonic oscillator (solid lines). At a constant height of approx. 25 nm above the sample, the tip was driven mechanically at f_d = ω_d/2π = 70657 Hz and electrically at f_m. Parameters to the least-squares fit are = 33 Hz, f₀ = 70586 Hz, and Q = 190. b) Amplitude and phase of the complex modulation index for a narrow-band frequency modulation, . The solid lines are a plot of the approximation in Equation 9. The dashed lines indicate the expected behaviour for f_m>> f_c, neglecting the influence of the damped harmonic oscillator.