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Specifications of CdTe Detector and Pixel Electronics
| Specification | Value |
|---|---|
| CdTe detector size | 10×10×2 mm3 |
| Voxel size | 1×1×2 mm3 |
| Detector DC bias voltage | −2000 V |
| Detector leakage current per pixel | 60 pA (up to few nA) |
| Electron/Hole drift time | 17 ns/190 ns |
| Pixel capacitance | 100 fF |
| ENC of the Energy resolution | 150 e− RMS |
| Minimum trigger / Equivalent Noise | 25 keV / 1000 e− RMS |
| Maximum Jitter of time stamp | 10 ns |
| Maximum power consumption | 200 μW/pixel |
