Fig. 1. The structure and electrical characteristics of our devices. (a) Device schematic showing our individually patterned TiN/SiOx/TiN devices on a SiO2/p-Si substrate. (b) Typical switching characteristics for our metal–insulator–metal devices. Following an electroforming sweep (1), the device may be reset (2) and set (3) repeatedly to cycle between ‘on’ and ‘off’ states. The state of the device may be read by applying a small bias, usually 0.5 V. At this voltage the resistance contrast between the ‘on’ and ‘off’ states is around three orders of magnitude. A larger version of this figure is shown in the ESI, Fig. S1.† .
