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. 2016 Jan 13;6:19232. doi: 10.1038/srep19232

Figure 1. Cross-sectional device structure of a SGT.

Figure 1

In blue are the materials used in our device. In grey is the depletion envelope at the source under small drain bias showing pinch-off. Current is controlled by the reverse biased Schottky source contact. The total current of the device itself is a contribution of two components, namely, high-field and low-field mode of operation. The high-field mode is through the modulation of barrier height present at the edge of the source while the low-field mode is through the depletion region present under bulk of the source.