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. 2016 Jan 13;6:19232. doi: 10.1038/srep19232

Figure 3. Schematic/AFM image of the ZS SGT device (b).

Figure 3

Cross-sectional TEM image of the fabricated SGT device on 290 nm thick SiO2 showing the SGT’s staggered structure and ZS’s approximate thickness of 120 nm.