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. 2016 Jan 13;6:19232. doi: 10.1038/srep19232

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Copyright © 2016, Macmillan Publishers Limited

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(a) I–V characteristics of Pt-ZnO contact as a function of temperature from 308 to 383 K. (b) Arrhenius plot. The activation barrier energy is extracted from the plot by measuring the slope of the curve which comes to be 0.28 ± 0.02 eV. (c) Simplified energy band diagram for Pt-ZnO-Ti system under thermal equilibrium at positive V_DS. Also schematically showing the two dominant charge carrier injection mechanism (TE and TFE) at reverse biased Schottky contact. E_FM1 and E_FM2 are the Fermi level for metals Pt and Ti, respectively.