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. 2016 Jan 13;6:19232. doi: 10.1038/srep19232

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(a) Experimental and simulated I_DS-V_GS curve of the SGT device at V_DS = 1 V. (b) I_DS-V_GS curves from the Pt-ZnO (SGT) and Ti-ZnO (FET) curves of the same device at V_DS = 1 V. Panel (b) also show the gate leakage current for both devices. (c) Experimental and (d) simulated output characteristics for the SGT device with V_GS steps of 2 V between −2 to 4 V. (e) Output characteristics for the FET device with V_GS steps of 5 V between −20 to 5 V.