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. 2016 Jan 18;6:19161. doi: 10.1038/srep19161

Figure 3. Dynamic response ID vs. time curves of graphene/GaSe-nanosheet hybrid GFET upon 532 nm incident laser ON/OFF modulation.

Figure 3

(a,b) before vacuum annealing, incident laser intensity ~188 mW/cm2. (c,d) after vacuum annealing, incident laser intensity ~198 mW/cm2. (a,c) are full dynamic response spectra, (b,d) shows zoom-in view of rise/decay. Response time was estimated using magnitude change criteria. Back gate voltage VBG = 0 V, and source-drain voltage VSD = 1 V for all measurements.