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. 2016 Jan 21;6:19574. doi: 10.1038/srep19574

Figure 1.

Figure 1

(a) Cross-sectional electron micrograph of 300 cycle ALD ZnO thin film deposited on a bare Si substrate at 150 °C; (b) ALD hybridized PEG-ZnO thin film. The process conditions were the same as (a); (c) The same film as shown in b after annealing at 500 °C in air.