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. 2016 Jan 21;6:19733. doi: 10.1038/srep19733

Figure 4. Disorder parameters of Cl-doped SnSe2.

Figure 4

Disorder parameter (kFle) dependences of (a) carrier concentration and (b) mobility of Cl-doped SnSe2 samples at 300 K. Dashed line points out the critical point [(kFle)c = 0.71] where metal-insulator transition occurs.