Figure 1.

(a) Schematic geometry of a top-gated light-emitting field-effect transistor (LEFET) with one-half of the channel coated with gold nanorods (NRs) and (b) LEFET operation principle with recombination and emission zone (not to scale). (c) Dark-field microscopy image of LEFET under white-light illumination showing four electrodes and three channels: without, half-covered, and with gold NRs. (d) Scanning electron micrograph of a typical high density gold nanorod distribution prepared by doctor-blading of a colloidal nanorod dispersion.