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. 2016 Jan 25;7:10475. doi: 10.1038/ncomms10475

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(a) Resistance plotted versus time for an exemplary data set of 5,000 data points showing multi-level switching. (b) Resistance measurement histogram for an entire ion exposure period including 50 total data sets similar to those shown in a. (c) Normalized distribution of data (solid blue line with open circles) in binned resistance states corresponding to observed levels in b, plotted along with a fit Poissonian distribution (red dashed line, solid circles), and (d) Poissonian model for multiple, independent, simultaneously adsorbed ions. The ion defect resistance for this data set was found to be 3.45 GΩ.