Skip to main content
. 2016 Jan 25;7:10475. doi: 10.1038/ncomms10475

Figure 7. Ion potential and gate voltage dependence.

Figure 7

(a) CNT potential plotted versus distance along the CNT axis with adsorbed ion. (b) Drain current plotted versus gate voltage showing experimental data from CNT in both pristine (red circles) and defected (cyan circles) states, along with corresponding results from a Landauer transport model (dark red and dark cyan lines) of the CNT with the adsorbed ion potential shown in a. (c) Lumped capacitance model for pristine and ion-adsorbed subthreshold CNT FETs. The ion charge qIon and separation distance h used to calculate the results plotted in a,b were 0.18 elementary charges and 7 Å, respectively, in concordance with DFT results.