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. 2016 Jan 27;7:10429. doi: 10.1038/ncomms10429

Figure 2. Graphene–ferroelectric chiral memory metadevice.

Figure 2

(a) Schematic representation of the graphene–ferroelectric chiral memory metadevice composed of THz transparent electrode (TTE), ferroelectric polymer layer (2.1 μm, represented by green), single-layer graphene, CDZM with a spacer of 2 μm and a polyimide (1 μm, represented by light red) as the substrate. Polarization of the incident THz is perpendicular to the TTE lines. (b) Polarization rotation angle (θ) through chiral memory metadevice after the application of an external pulsed gating voltage (VG,pulse) lasting for 1 s, and the difference (Δθ) between θ+200V and θ−200V. (c) Polarization rotation angle (θ) in the VG,pulse within a range of +200 and −200 V at 1.1 THz. Arrows refer to the VG,pulse sweep direction. CDZM, conjugated double Z meta-molecules.