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. 2016 Feb 11;6:20610. doi: 10.1038/srep20610

Figure 3. Ultra-fast ELO and wafer re-use after the ELO.

Figure 3

(a) Etching solution dependence of the ELO time as a parameter of the pre-patterning process. With the pre-patterning and the insertion of the etching acceleration solutions, the ELO time was significantly reduced. (b) Etching solution dependence of the residue thickness. (c) The effect of a wafer size for the ELO process; a negligible dependence was observed. (d) AFM images of GaAs surface at each process step. (e) Raman spectra of the GaAs layer at each process step.