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. 2016 Feb 11;6:20610. doi: 10.1038/srep20610

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(a) Measured transfer characteristics of a GaAs-OI HEMT with a L_G of 2 μm. The device exhibits a quite low S.S. of 83 mV per decade, which is close to the theoretical limit of 60 mV per decade at room temperature. (b) Output characteristics of the same device shown in (a) showing clear current saturation. (c) I_D-V_G curves for different V_B; the electrical characteristics of the GaAs-OI HEMT can be controlled by V_B after the device fabrication. (d) Temperature dependence of the Hall mobility and N_s of the fresh and re-grown GaAs HEMTs.