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. 2016 Feb 11;6:20610. doi: 10.1038/srep20610

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(a) J-V characteristics of the GaAs solar cell on Si (blue) and GaAs (red, control) under AM 1.5 G, 1-sun measurement condition. The inset is a top view SEM image showing the fabricated GaAs solar cell on Si. (b) EQE spectra of the GaAs solar cell on Si (blue) and GaAs (red). (c) I_Cdark and I_Cph characteristics of the InGaP/GaAs HPT on Si as a function of V_CE. (d) Incident optical power dependence of the G_opt of the same device shown in (c).