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. 2016 Feb 12;6:21070. doi: 10.1038/srep21070

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Copyright © 2016, Macmillan Publishers Limited

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(A) Four-terminal GR/CIGS/Mo/(SLG/BSG) FET. (B) SEM of device in panel (A). Scale-bar is 10 μm. (Inset) TEM cross section. Scale-bar is 100 nm. (C) Left: G (normalized) vs. V_G in the dark. Right: Band structure for multi-layer graphene with Fermi-level for each sample in plot to left. (D) Graphene (source)-Mo (drain) current-voltage (I–V) curve with(red)/without(blue) the Al₂O₃ top-dielectric under light(solid)/dark(dotted) for GR/CIGS/Mo/SLG. (E) Graphene-Mo I–V at different V_G for GR/CIGS/Mo/SLG. (F) Photocurrent with V_G = 0 V bias under 11.14 mW cm⁻² illumination. (G) I–V of the GR/CIGS/Mo/SLG under 1000 W/m² illumination.