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. 2016 Feb 12;6:21070. doi: 10.1038/srep21070

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Copyright © 2016, Macmillan Publishers Limited

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(A) Data (green circles) and best-fit model prediction (solid blue line) for J₀ (mA/cm²) vs. T for GR/CIGS/Mo/SLG, using a Landauer transport model (see Eq.(S10)) giving Φ_b = 0.13 eV. (Inset) Same data (blue circles) plotted as ln(J₀/T²) vs. 1000/T where J₀ is in mA/cm² and T is in K, but using an ideal Schottky diode model, , for the solid green line with best-fit value Φ_b = 0.11 eV. (B) Same data (red circles) used in panel (a), but plotted as a modified Arrhenius-plot (n*ln(J₀) vs. 1000/T), where n is the ideality factor and J₀ is in mA/cm²; finding the best-fit of Eq. (S12) (solid red line) to the data gives E_a = 0.96 eV. (C), Nyquist plot from C-V giving depletion width (W_d) of 190 nm. (D) Schematic band structure of multi-layer-GR/CIGS/Mo/SLG interface. φ_G0 = Work function of intrinsic graphene, φ_G = Work function of graphene, Φ_b = Schottky barrier height, φ_CIGS = Work function of CIGS, IP_CIGS = Ionization potential of CIGS, E_G = Band gap of CIGS, V_bi = Built-in potential.

Inline graphic — (A) Data (green circles) and best-fit model prediction (solid blue line) for J₀ (mA/cm²) vs. T for GR/CIGS/Mo/SLG, using a Landauer transport model (see Eq.(S10)) giving Φ_b = 0.13 eV. (Inset) Same data (blue circles) plotted as ln(J₀/T²) vs. 1000/T where J₀ is in mA/cm² and T is in K, but using an ideal Schottky diode model, , for the solid green line with best-fit value Φ_b = 0.11 eV. (B) Same data (red circles) used in panel (a), but plotted as a modified Arrhenius-plot (n*ln(J₀) vs. 1000/T), where n is the ideality factor and J₀ is in mA/cm²; finding the best-fit of Eq. (S12) (solid red line) to the data gives E_a = 0.96 eV. (C), Nyquist plot from C-V giving depletion width (W_d) of 190 nm. (D) Schematic band structure of multi-layer-GR/CIGS/Mo/SLG interface. φ_G0 = Work function of intrinsic graphene, φ_G = Work function of graphene, Φ_b = Schottky barrier height, φ_CIGS = Work function of CIGS, IP_CIGS = Ionization potential of CIGS, E_G = Band gap of CIGS, V_bi = Built-in potential.