Figure 2. Control of the nitrogen vacancy spin using uniaxial lattice strain.

(a) Total energy difference between the S = 1 and S = 0 states of V_N⁻ as a function of the compressive uniaxial strain applied along the [] direction. (b) The G₀W₀@PBE quasi-particle electronic structure of the S = 1 state of V_N⁻ under uniaxial strain of −1%. The number next to a defect level is the location of the state referred to E_V. Three constants, μ, ν and λ are used to denote the positions of the occupied defect orbitals (see Table 1).