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. 2016 Feb 17;6:21020. doi: 10.1038/srep21020

Figure 1.

Figure 1

SEM cross-section images (Top-(a–c)); AES profile (Middle-(d–f)); and corresponding device switching characteristics (Bottom-(g–i)) of sidewall electrode oxidation experiments under different annealing conditions: annealing 2 h/300 °C (Left-(a,d,g)); annealing 15 min/400 °C (Middle-(b,e,h)); annealing 30 min/500 °C (Right-(c,f,i)). The thickness of oxidized TaOx layers increase with elevated temperature.