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. 2016 Feb 17;6:21168. doi: 10.1038/srep21168

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(a) Three-terminal I-V characteristics of high resistance (HR) and low resistance (LR) h-BN (Co|h-BN|Graphene) contacts at room temperature. The current for the HR contact is scaled by a factor of 10 to highlight the non-linearity with bias. Inset: As measured I-V curve of the HR contact in a higher current-voltage range. (b) Temperature dependent I-V characteristics for the LR h-BN contact at 1.5 and 300 K. Inset: Temperature dependence of the HR h-BN contact resistance at zero bias (ZBR) and 300 mV.