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. 2016 Feb 23;10:57. doi: 10.3389/fnins.2016.00057

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Copyright © 2016 Mehonic and Kenyon.

This is an open-access article distributed under the terms of the Creative Commons Attribution License (CC BY). The use, distribution or reproduction in other forums is permitted, provided the original author(s) or licensor are credited and that the original publication in this journal is cited, in accordance with accepted academic practice. No use, distribution or reproduction is permitted which does not comply with these terms.

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Regions of current instabilities in I/V sweeps of SiO_x RRAM cells during non-volatile memory switching. (A) A gradual reset process, before an abrupt transition to the HRS. The zoomed region highlights the region of instability. (B) Current instability before an abrupt set process. (C) Voltage response with a constant current input, demonstrating the threshold effect of the voltage transients (spikes). In this case, no voltage transients or spikes are observed until a current of 5 mA is applied to the device.