Skip to main content
. 2015 May 15;27(25):3760–3766. doi: 10.1002/adma.201500889

Figure 3.

Figure 3

a) Energy bands for isolated graphene and InSe layers with electron affinities of χ = −4.5 and −4.6 eV, respectively, and a bandgap energy for InSe of E g = 1.26 eV at 300 K. The Fermi level, E F, is shown for graphene at the neutrality point and for n‐InSe at 0.21 eV below the conduction band (CB) minimum. b) Band alignment at equilibrium (V s = 0) under various applied gate voltages V g. For V g > 0, the Fermi level of graphene raises toward the Dirac point and electrons tend to diffuse into the InSe layer; as the concentration of holes (induced by a negative gate voltage) increases, the Fermi level in graphene moves closer to that of InSe and electrons retreat from InSe.