Table 1. Summary and comparison of the fabrication, OCV, power density and degradation of various micro-SOFCs.
| Group | Substrate (process./thickness) | Anode (process./thickness) | Electrolyte (process/.thickness) | Cathode (process/thickness) | Active area [mm2] | OCV [V] | Power density [mW cm−2] | Temp [oC] | Degradation rate |
|---|---|---|---|---|---|---|---|---|---|
| Harvard Univ. (Kerman et al.)3 | Si wafer (L&E/−) | Pt (SP/80 nm) | YSZ (SP/100 nm) | Pt (SP/80 nm) | 0.03 | 0.97 | 1037 | 500 | 50%/12 h (at 400 °C) |
| (Tsuchiya et al.)5 | Si wafer (L&E/−) | Pt (SP/30 nm) | YSZ (SP/54 nm) | LSCF (SP/47 nm) | 25 (w/Ni grid) | 0.75 | 155 | 510 | 14%/1 h (at 500 °C) |
| Stanford Univ. (An et al.)4 | Si wafer (L&E/-) | Pt (SP/80 nm) | YSZ|YDC (ALD/60 nm) | Pt (SP/80 nm) | 0.002 (corrugated membrane) | 1.05 | 1300 | 450 | 34%/3 h (at 400 °C) |
| Seoul National Univ. (Ha et al.)10 | AAO (−/100 μm) | Pt (SP/ ≤ 380 nm) | YSZ (ALD & SP/390 nm) | Pt (SP/200 nm) | 4 | 1.1 | 180 | 450 | 11%/3 h (at 450 °C) |
| (Ji et al.)11 | AAO (−/100 μm) | Pt (SP/250 nm) | YSZ|GDC (ALD & SP/460 nm) | Pt (SP/200 nm) | 1 | 1.07 | 35 | 450 | 30%/4 h (at 450 °C) |
| K.I.S.T. (Kwon et al.)12 | AAO (−/600 nm) | Pt (SP/80 nm) | YSZ|Al2O3|YSZ (ALD&PLD/900 nm) | Pt (SP/80 nm) | 0.01 | 1.0 | 90 (at 0.8 V) | 400 | 17%/17 h (at 400 °C) |
| (Noh et al.)13 | Ni-YSZ (CM, sP/1 mm) | Ni-YSZ (PLD/2–3 μm) | YSZ|GDC (PLD/600 nm) | LSC-GDC/LSC (PLD/5 μm) | 100 | 1.1 | 588 | 500 | 17%/100 h (at 600 °C) |
| Houston Univ. (Chen et al.)14 | Ni foil (L&E/6 μm) | Ni-YSZ (PLD/6 μm) | YSZ (PLD/2 μm) | LSC (PLD/6 μm) | – | 0.8 | 110 | 570 | 0%/6 h (at 520 °C) |
| This study | LSTN-YSZ (40 μm)/STS 434 L 380 μm (TC) | Ni-YSZ (PLD/600 nm) | YSZ (PLD/2 μm) | LSC (PLD/700 nm) | 3 | 1.0 | 560 | 550 | 0%/13 h (at 550 °C) |
Notation: PM: powder metallurgic process, CM: compression-molded, sP: screen printing, SP: sputtering, TC: tape casting, PLD: pulsed laser deposition, ALD: atomic layer deposition, L&E: lithography and etching.