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. 2016 Mar 1;6:22463. doi: 10.1038/srep22463

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(a–c) External quantum efficiency vs. current density characteristics for devices with Liq interlayers of 1, 2, or 3 nm between only the EML and HBL (A1–A3), between only the HBL and ETL (B1–B3), or between the HBL and ETL with a 3-nm-thick layer between the EML and HBL (C1–C3). (d–f) Luminance (empty symbols) and current-density (filled symbols) as a function of voltage for the devices in (a–c).