Table 3. Structural parameters obtained from the Gd L ₃-edge EXAFS fits for the Gd-doped Bi₂(Se, Te)₃ thin films.

Bond	Parameter	at.% Gd
		4.8	6.4	10.6
Gd-Te	xTe	0.72	0.72	0.14
N = 6	RGd-Te (Å)	3.08	3.09	3.09
		0.006	0.007	0.005
Gd-O	xO	0.28	0.28	0.86
N = 6	RGd-O (Å)	2.37	2.43	2.38
		0.020	0.023	0.010
	ΔE0 (eV)	1.6	2.0	0.6

Coordination number, N, interatomic distance, R, Debye-Waller factor, σ², and fraction x, for each path. The uncertainty in x is ±10%, in R ±0.02 Å, in ΔE₀ ±0.2 eV, and in σ² ±20%.