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. 2015 May 9;22(Pt 4):980–994. doi: 10.1107/S1600577515005780

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© J. Petit et al. 2015

This is an open-access article distributed under the terms of the Creative Commons Attribution Licence, which permits unrestricted use, distribution, and reproduction in any medium, provided the original authors and source are cited.

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Schematic sample arrangement for in situ four-point bending measurements. The Si sample is scanned along direction , and at each position a Laue pattern is recorded on the CCD detector. A Ge single-crystal is used to calibrate the experimental geometry. The index ‘cam’ stands for the detector frame and the index ‘ech’ for the sample frame. Axis lies along the specimen length (longitudinal direction), along the specimen width (transverse direction), which is also the loading direction, and along the bending axis (normal direction).

Inline graphic — Schematic sample arrangement for in situ four-point bending measurements. The Si sample is scanned along direction , and at each position a Laue pattern is recorded on the CCD detector. A Ge single-crystal is used to calibrate the experimental geometry. The index ‘cam’ stands for the detector frame and the index ‘ech’ for the sample frame. Axis lies along the specimen length (longitudinal direction), along the specimen width (transverse direction), which is also the loading direction, and along the bending axis (normal direction).