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. 2015 May 9;22(Pt 4):980–994. doi: 10.1107/S1600577515005780

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© J. Petit et al. 2015

This is an open-access article distributed under the terms of the Creative Commons Attribution Licence, which permits unrestricted use, distribution, and reproduction in any medium, provided the original authors and source are cited.

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Profile of deviatoric elastic strain in the in situ bent Si crystal, along direction , for three load levels: 0 N, 25 N, 50 N. (a) Absolute evaluation with the standard method described in §3.1. (b) Relative evaluation with the standard method. (c) Relative evaluation with the new Laue-DIC method. Comparison with the asymptotic beam theory donated by ‘th’.

Inline graphic — Profile of deviatoric elastic strain in the in situ bent Si crystal, along direction , for three load levels: 0 N, 25 N, 50 N. (a) Absolute evaluation with the standard method described in §3.1. (b) Relative evaluation with the standard method. (c) Relative evaluation with the new Laue-DIC method. Comparison with the asymptotic beam theory donated by ‘th’.