Skip to main content
. 2016 Mar 14;6:23039. doi: 10.1038/srep23039

Figure 2.

Figure 2

(a) Transfer characteristics of HPA activated a-IGZO TFTs varying N2 pressure at 100 °C, and PBS test results of HPA activated a-IGZO TFTs under (b) N2 4 MPa at 100 °C (c) 300 °C for 1000 s.