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. 2016 Mar 15;6:23053. doi: 10.1038/srep23053

Figure 4. Microwave emission spectra.

Figure 4

Microwave emission spectra, measured at different bias voltages and at a heat sink temperature of 70 K, for (a) sample B, and (b) a nominally identical non-lasing device belonging to the same epitaxial growth (dimensions 760 × 140 μm). The samples were mounted on the cold finger of a helium continuous-flow cryostat and driven in pulsed mode with 200 ns pulses and 10 kHz repetition rate. (c) Microwave emission measured at room temperature at various bias conditions for a 360 × 140 μm device, similar to sample B, biased with 400 ns pulses at a 1 kHz repetition rate.