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. 2016 Mar 21;6:23319. doi: 10.1038/srep23319

Figure 3. Structure and dark IDS-VDS characteristics of the p-i-n diode.

Figure 3

(a) Schematic diagram and (b) SEM image of the p-i-n diode. The density of this SWNT network is ~ 1.4 μm−2. The channel length is 6 μm and is evenly divided into three parts, as indicated by the arrows. The width is 5 μm. (c) Logarithmic plot of dark I–V characteristics of this SWNT network p-i-n diode at T = 300 K. The interval of each data point is 4 ms. Inset: Linear plot of I–V characteristics.