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. 2016 Mar 21;6:23319. doi: 10.1038/srep23319

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(a) Dark I_DS-V_DS characteristics of the SWNT network p-i-n diode with different doping degrees. Its entire channel length is 6 μm. t₁ is at a constant of 5 h, with t₂ increasing from 6 to 18 h; t₂ is at a constant of 6 h, with t₁ increasing from 0.5 to 5 h. (b) Energy band diagram of the p-i-n device without bias. The red solid line denotes the reduction of the band gap at higher doping fractions. (c) I_DS-V_DS characteristics of the SWNT network p-i-n diode with different channel lengths.