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. 2016 Mar 24;6:23595. doi: 10.1038/srep23595

Figure 1.

Figure 1

(a) Strain-balanced active region band structure. The design is based on Al0.63In0.37As/Ga0.35In0.65As/Ga0.47In0.53As material system. The layer sequence in nm, starting from the injection barrier, is 2.7/ 2.1/ 0.9/ 3.2/ 2.6/ 0.9/ 3.0/ 2.1/ 1.7/ 2.4/ 1.5/ 1.5/ 2.2/ 1.5/ 1.5/ 2.0/ 1.3/ 1.6/ 1.8/ 1.3/ 1.7/ 2.8/ 1.9/ 2.8/ 2.4/ 2.8. The barriers are in bold font, and the wells are in normal font, the Ga0.47In0.53As insertions are in italic, and the underlined layers are doped to n = 1.7 × 1017 cm−3. (b,c) Schematic descriptions of two major DFG processes for the strain-balanced design, involving one upper level 5 (4) and two lower levels j, k (j, k = 1, 2, 3. j ≠ k) (b), and two upper levels 4, 5, and one lower level j (j = 1, 2, 3) (c).