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. 2016 Jan 28;291(13):6843–6857. doi: 10.1074/jbc.M115.708495

TABLE 1.

Crystallographic statistics (Values in parentheses are for the high resolution shell)

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Rmergehkl Σi|Ii(hkl) − [I(hkl)]|/Σhkl ΣiIi(hkl), where Ii(hkl) is the ith measurement of reflection hkl and [I(hkl)] is the weighted mean of all measurements.

†† Rpim = Σhkl (1/(N − 1)) 1/2 Σi | Ii(hkl) − [I(hkl)]|/Σhkl Σi Ii(hkl), where N is the redundancy for the hkl reflection.

††† Rwork/Rfree = Σhkl | FoFc |/Σhkl|Fo|, where Fc is the calculated and Fo is the observed structure factor amplitude of reflection hkl for the working/free (5%) set, respectively.