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. 2016 Apr 1;6:23930. doi: 10.1038/srep23930

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(a) Schematic of an electrode-binary oxide-electrode RS device with a tree structure of filamentary conducting channels embedded inside the RS insulating medium. (b) Typical unipolar-type resistive switching I–V characteristics of a metal-binary oxide-metal RS device. The switching resistance R is defined as the ratio of the switching voltage to the switching current.