Table 1. Fabrication parameter values of used ReRAM devices and growth method.

Structure	Switching film Thickness	Growth Temperature	Partial pressure or working pressure	Method
Pt/NiO/Pt	300 nm	RT	Ar/O2 = 20:4, 17%	DC magnetron sputtering, ref. 40
	350 nm	250 °C	Ar/O2 = 27:3, 10%
	400 nm	RT	Ar/O2 = 27:3, 10%
Pt/TiO2/Pt	100 nm	RT	Ar/O2 = 2:8, 80%	RF-sputtering
	50 nm	RT	Ar/O2 = 2:8, 80%
Pt/Nb2O5/Pt	40 nm	200 °C		Pulsed laser deposition, ref. 41
Al/Al2O3/Al	100 nm	RT		Anodizing technique
Pt/HfO/Ti	10 nm	RT	Ar/O2 = 10:1.5, 2 mTorr	Inductively coupled RF-sputtering
Pt/MgO/CuAg/MgO/Ag	50 nm 100 nm	RT	Ar/O2 = 10:2, 3 mTorr	RF-sputtering
Pt/CoO/Pt	50 nm	RT	Ar = 15 sccm, 2 mTorr	DC magnetron sputtering, ref. 42
Ti/AlN/Ti	70 nm	RT	Ar/N2 = 10:3, 3 mTorr	RF-sputtering
Ti/MnO2/Pt	80 nm	650 °C	Ar/O2 = 5:5, 50%	RF-magnetron sputtering with Mn target