Figure 1. Resistivity as a function of temperature for NdNiO₃ films grown on NdGaO₃ (solid line) and YAlO₃ (dashed line) substrates.

A MIT occurs for the film on NdGaO₃ at ~130 K. Corresponding STEM images for the film grown on NdGaO₃ at room and cryo temperatures are shown on the right. Arrows mark the approximate interface between the film and substrate. Images were acquired using fast acquisition and cross-correlated over many frames for higher signal-to-noise.