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. 2016 Mar 24;7:10989. doi: 10.1038/ncomms10989

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(a) Sketches of two cavities consisting of a Si sphere (shown as a red sphere) with and radius μm immersed in a 3D SiC host (shown as a grey background). (b) Linear graph portraying the resonance frequency (normalized to the SiC plasma frequency) and quality factor for six cavities, showing small variation in the resonance frequency, while having different quality factors. Here the imaginary part of relative permittivity of SiC is assumed to be 0.1 at the SiC plasma frequency. (c) Colourmaps of the electric field magnitude distributions of the surface-avoiding eigenmodes, obtained using numerical simulations, in six different cavities (five of which are obtained from the left cavity but with different sizes of the ENZ host, whereas the sixth is the second cavity, shown in the top left panel).

Inline graphic — (a) Sketches of two cavities consisting of a Si sphere (shown as a red sphere) with and radius μm immersed in a 3D SiC host (shown as a grey background). (b) Linear graph portraying the resonance frequency (normalized to the SiC plasma frequency) and quality factor for six cavities, showing small variation in the resonance frequency, while having different quality factors. Here the imaginary part of relative permittivity of SiC is assumed to be 0.1 at the SiC plasma frequency. (c) Colourmaps of the electric field magnitude distributions of the surface-avoiding eigenmodes, obtained using numerical simulations, in six different cavities (five of which are obtained from the left cavity but with different sizes of the ENZ host, whereas the sixth is the second cavity, shown in the top left panel).