Figure 2. Evolution of charge transport while bending the substrate.

(a) Schematics on how uniaxial strain was applied. (b) Evolution of the four-terminal conductivity under compressive strain for device A. The inclined arrows show the voltage sweep direction. (c) Evolution of the mobility under compressive strain. The average four-terminal mobility during the two compression cycles is shown for device A and the saturation mobility during the first compression for devices B and C. The horizontal error bars indicate the uncertainty of the applied strain deriving from the reading uncertainty of 0.1 mm of the compression distance dL when the bending set-up is used, and the vertical error bars for device A represent the s.d. of the mobility during the two compression cycles.