Electrical stress |
Chip Level |
Lumen degradation, increase in reverse leakage current, increase in parasitic series resistance and short circuit. |
Defects in LED chip, electromigration of the metal atoms in the electrical contact to the surface of the LED die, instability in Mg diffusion in p- GaN layer and dislocation generation and movement at chip level |
26,27,28,29,30,31,32,33,34,35,36
|
Package level |
Lumen degradation |
Carbonization of encapsulation and phosphor thermal quenching |
3,4,5,6,7,8,9,10,11,12,13,14,15,16,17,18,19,20,21,22,23,24,25,26,27,28,29,30,31,32,33,34,35,36,37,38,39,40,41,42,43
|
Thermal stress |
Package level |
Lumen degradation, Detachment of encapsulant from molding part |
Browning of the white reflector molding part of device |
44 |
Chip level |
Lumen degradation |
Degradation of the phosphors conversion efficiency |
20, 44, 45
|
Electrical stress and thermal stress |
Chip level |
Lumen depreciation |
Crack in the LED chip |
30, 31
|
Package level |
Lumen degradation |
Encapsulant yellowing, lens cracking or solder joint fatigue |
46, 47, 48, 49, 50
|
Thermal stress and moisture stress |
Chip level |
Lumen degradation, Forward voltage change, permanent destruction of LED i.e. no light |
Wire ball bond fatigue |
7 |
Package level |
Reduction of the overall light output, |
LED chip-die attach delamination, moisture entrapment in encapsulant, and lens cracking |
4, 5, 6, 7, 8, 51, 52
|
Thermal, electrical and moisture stresses (MET test proposed in this work) |
Chip level |
Rapid Lumen depreciation, forward voltage drop |
LED chip/die attach delamination, defects in LED chip |
Proposed mechanism in this paper |
Package level |
Rapid Lumen degradation |
Browning of the white silicone reflector molding part of device, encapsulant detachment from molding part |
Proposed mechanism in this paper |