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. 2016 Apr 11;6:24216. doi: 10.1038/srep24216

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Copyright © 2016, Macmillan Publishers Limited

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(a) Branched rutile cluster in projection with discernable crystallographic incidences. The inset shows an SEM image of branched rutile cluster. Typical angle between the primary crystal and the branches, measured between (110) planes is ~45°. Dotted lines drawn to corresponding EDPs (c,d) assist the measurement. EDP in (d) is related to EDP in (c) by 180° rotation around the (101)-plane normal, which corresponds to (101) twin operation. The inset shows an SEM image of a similar twin cluster. (b) Second generation of branching follows the same crystallographic rules. Squares indicate the locations of selected area EDPs in (c–f). Colored dots represent simulated diffraction patterns for: R₁–primary crystal, R₂–1^st generation twin, R₃ and R₄–2^nd generation twins. Small angular dispersion of diffraction spots stems from lateral dispersion of c-axes caused by imperfect fiber attachment. The sample was synthesized using 56 mM Ti(IV)-butoxide in 4.4 M HCl and HT treated at 180 °C for 1 hour.

Inline graphic — (a) Branched rutile cluster in projection with discernable crystallographic incidences. The inset shows an SEM image of branched rutile cluster. Typical angle between the primary crystal and the branches, measured between (110) planes is ~45°. Dotted lines drawn to corresponding EDPs (c,d) assist the measurement. EDP in (d) is related to EDP in (c) by 180° rotation around the (101)-plane normal, which corresponds to (101) twin operation. The inset shows an SEM image of a similar twin cluster. (b) Second generation of branching follows the same crystallographic rules. Squares indicate the locations of selected area EDPs in (c–f). Colored dots represent simulated diffraction patterns for: R₁–primary crystal, R₂–1^st generation twin, R₃ and R₄–2^nd generation twins. Small angular dispersion of diffraction spots stems from lateral dispersion of c-axes caused by imperfect fiber attachment. The sample was synthesized using 56 mM Ti(IV)-butoxide in 4.4 M HCl and HT treated at 180 °C for 1 hour.