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. 2016 Apr 11;6:24116. doi: 10.1038/srep24116

Figure 4. I-V performance and theoretical models of the AC-OEL devices with various hole generation layers (HGL).

Figure 4

(a) Experimental RMS current density as function of RMS voltage utilizing Poly-TPD:F4TCNQ, Poly TPD, F4TCNQ as HGL or absence, respectively. (b–e) Are electronic band structures analysis with various HGLs. (f) Theoretical RMS current density as function of RMS voltage by fitting in tunneling model and P-N junction model.